The instrument is equipped with a STEM detector, double-tilt TEM specimen holder, and a charge-coupled-device camera for the acquisition of on-axis diffraction patterns. R = n) analyses of dislocations and stacking faults in GaN by STEM imaging in a scanning electron microscope.Based on the reciprocity theorem, scanning transmission electron microscopy (STEM) can also be applied for defect characterization, but has been less frequently used up to now. R = n) criterion by setting up different two-beam diffraction conditions with an imaging vector g.Specifically, the Burgers vector b of dislocations or displacement vector R of stacking faults can be determined on the basis of the g As of now, transmission electron microscopy (TEM) is the most frequently used technique to study the properties of single dislocations and stacking faults. Dislocations and stacking faults are important crystal defects, because they strongly influence material properties.
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